F1070 by R F Polyfet Devices Inc with NSN 5961-01-514-2181 - Request a Quote

Part Number : F1070 NSN : 5961015142181 NIIN : 015142181
Item Name : Transistor Manufacturer : R F Polyfet Devices Inc CAGE Code : 1HW28
FSC Details : 5961 Semiconductor Devices and Associated Hardware FSG : 59 Electrical and Electronic Equipment Components INC Code : 20588
Country : USA NCB Code : 01

At One Click Purchasing, we are your reliable source for the NSN part F1070 manufactured by R F Polyfet Devices Inc. We carry a wide range of popular NSN items on our website, including Transistor like part number F1070 which is listed with the NSN 5961015142181 for easy identification. If you are interested in F1070 item, then take the advantage of our online RFQ service, or peruse our website as you see fit to find other items of interest that you may wish to learn more about.

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NSN Information for Part Number F1070 with NSN 5961-01-514-2181, 5961015142181

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5961-01-514-2181

Item PartTypeName:

TRANSISTOR

5961015142181NA
CIICHCCESDPMICCriticalityENAC
AA0
Part NumberISCRNVCRNCCHCCMSDSSADC
F1070523

Characteristics Data of NSN 5961-01-514-2181, 5961015142181

MRCCriteriaCharacteristic
ABMKOverall Width0.550 INCHES NOMINAL
AXGYMounting MethodSLOT
CTQXCurrent Rating Per Characteristic16.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM OF STANDARD RANGE
CTRDPower Rating Per Characteristic350.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE
ABKWOverall Height0.200 INCHES MAXIMUM
CXCYPart Name Assigned By Controlling AgencySILICON RF POWER, VDMOS TRANSISTOR
CTQNVoltage Rating In Volts Per Characteristic70.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 70.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE
CBBLFeatures ProvidedLOW NOISE
TTQYTerminal Type And Quantity2 TAB, SOLDER LUG
ABBHInclosure MaterialMETAL
MRCDecoded RequirementClear Text Reply
ABHPOverall Length1.200 INCHES NOMINAL
FEATSpecial Features8GOLD METALIZED; PACKAGE STYLE - AH; HIGH EFFICIENCY; LINEAR; HIGH GAIN; MAXIMUM JUNCTION TEMPERATURE PLUS 200.0 DEGREES C; STORAGE TEMPERATURE MINUS 65.0 TO PLUS 150.0 DEGREES C; DESIGNED SPECIFICALLY FOR BROADBAND RADIO FREQUENCY (RF) APPLICATIONS
CTMZSemiconductor MaterialSILICON
AKPVMounting Facility Quantity2

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